Работы, цитирующие эту работу

Работ: 2

Работа: On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates

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   A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

   ГлаваSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.chapter.000712

2. Growth and structural study of the solid solution Si1−xGex (0 < x < 1)

   Alijon Shonazarovich RAZZOKOV, Serhii Ivanovych Petrushenko, Mateusz Fijalkowski +2

   СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Crystal Growth2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006586