Работы, цитирующие эту работу

Работ: 2

Работа: Misfit dislocations in semiconductors

1. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

   A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

   ГлаваSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.chapter.000712

2. Growth and structural study of the solid solution Si1−xGex (0 < x < 1)

   Alijon Shonazarovich RAZZOKOV, Serhii Ivanovych Petrushenko, Mateusz Fijalkowski +2

   СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Crystal Growth2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006586