E. V. Malisova

2 та иш

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Behavior of copper in gallium arsenide with high tin concentration

   I. V. Kаmenskaya, M. A. Krivov, E. V. Malisova +6

   МақолаSemiconductor Quantum Structures and DevicesRussian Physics Journal19800 иқтибос

   ABIABI:AkademIndex/openalex/1980.article.000114

2. Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

   В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6

   МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 иқтибос

   ABIABI:AkademIndex/openalex/1981.article.000112