V. N. Ryazanov

1 та иш

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk

1. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

   I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

   МақолаSemiconductor materials and interfacesRussian Physics Journal19900 иқтибос

   ABIABI:AkademIndex/openalex/1990.article.000080