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Н. А. Феоктистов

4 та иш

S. I. Vavilov State Optics Institute, St. Petersburg

  1. Bolometric properties of silicon thin-film structures fabricated by plasmachemical vapor-phase deposition

    V. Yu. Zerov, Yu. V. Kulikov, V. G. Malyarov +2

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19970 иқтибос
    ABI

  2. Fabrication of regular three-dimensional lattices of submicron silicon clusters in an SiO2 opal matrix

    V. N. Bogomolov, В. Г. Голубев, Н. Ф. Картенко +6

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19980 иқтибос
    ABI

  3. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

    V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

    МақолаThin-Film Transistor TechnologiesTechnical Physics Letters19980 иқтибос
    ABI

  4. Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon

    V. G. Golubev, А. В. Медведев, А. Б. Певцов +1

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19980 иқтибос
    ABI