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I. T. Serenkov

5 та иш

RAS - Ioffe Physico Technical Institute

  1. Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Nikolaev +6

    МақолаSilicon Nanostructures and PhotoluminescenceMaterials science forum19970 иқтибос
    ABI

  2. Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Kudryavtsev +8

    МақолаSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19970 иқтибос
    ABI

  3. Study of the growth of YBa2Cu3O7−x films on a Al2O3 single crystal with a CeO2 buffer sublayer

    V. V. Afrosimov, E. K. Gol’man, R. N. Il’in +6

    МақолаPhysics of Superconductivity and MagnetismTechnical Physics Letters19980 иқтибос
    ABI

  4. Component composition and strain of barium-strontium titanate ferroelectric films

    S. F. Karmanenko, А. И. Дедык, N. N. Isakov +4

    МақолаFerroelectric and Piezoelectric MaterialsTechnical Physics Letters19990 иқтибос
    ABI

  5. Dependence of the microwave surface resistance on the structure and thickness of superconducting cuprate films

    S. F. Karmanenko, A. A. Svishchev, А. А. Семенов +3

    МақолаPhysics of Superconductivity and MagnetismTechnical Physics Letters19990 иқтибос
    ABI