A. Kryganovski

1 та иш

Russian Academy of Sciences

1. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   МақолаGaN-based semiconductor devices and materialsMaterials science forum20000 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000163