V. I. Vdovin

2 та иш

Institute of Rare Metals, 109017 Moscow, Russian Federation

1. Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

   V. I. Vdovin, M. G. Mil’vidskiĭ, T. G. Yugova +2

   МақолаSemiconductor materials and interfacesJournal of Crystal Growth19940 иқтибос

   ABIABI:AkademIndex/openalex/1994.article.000037

2. Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

   Н. А. Соболев, A. M. Emel’yanov, E. I. Shek +1

   МақолаSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000127