V. Cimalla

2 та иш

Fraunhofer Institut für Angewandte Festkörperphysik

1. Modelling the Formation of Nano-Sized SiC on Si

   K. L. Safonov, Alexander Schmidt, D. V. Kulikov +2

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000130

2. Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability

   L. Kassamakova-Kolaklieva, Roumen Kakanakov, V. Cimalla +4

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000211