Fabio Bergamini

1 та иш

CNR-IMM

1. Current Analysis of Ion Implanted p<sup>+</sup>/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

   Roberta Nipoti, Fabio Bergamini, F. Moscatelli +3

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000136