A. A. Akopyan

1 та иш

Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, Ukraine

1. Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface

   A. A. Akopyan, Kh. N. Bachronov, O. Yu. Borkovskaya +5

   Мақолаsolar cell performance optimizationSemiconductors20090 иқтибос

   ABIABI:AkademIndex/openalex/2009.article.000186