Sh.X. Juraev

1 та иш

Termez State University

1. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

   А.С. Рысбаев, I. R. Bekpulatov, Б.Д. Игамов +1

   МақолаSemiconductor materials and interfacesEurasian journal of physics and functional materials20192 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213640