Javokhir A. Ergashev

1 та иш

Research Institute of semiconductor physics and microelectronics

1. DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS

   Shakhrukh Kh. Daliev, Javokhir A. Ergashev

   МақолаSilicon Nanostructures and PhotoluminescenceEuropean Science Review20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.007542