D.A. Rakhmanov

2 та иш

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar st., Tashkent, 100057, Uzbekistan

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   МақолаSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.000971

2. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   МақолаSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.010369