A.S. Doroshkevich

4 та иш

Institute of Materials Science of Uzbekistan Academy of Sciences, 102226, Tashkent, Uzbekistan

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   МақолаSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.000971

2. Interfacial interactions and free volume in multicomponent titanium-based carbon-nitrides coatings

   Matlab N. Mirzayev, A. Atilgan, S.F. Samadov +12

   МақолаMuon and positron interactions and applicationsCeramics International20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.002320

3. Effects of X-ray radiation on the electronic properties of MAPbBr3 perovskite films

   A.S. Doroshkevich, Zh.V. Mezentseva, L.M. Ledo-Pereda +11

   МақолаPerovskite Materials and ApplicationsPhysics Letters A20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.004657

4. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   МақолаSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.010369