Ушбу иш иқтибос қилган ишлар

7 та иш

Иш: The low-temperature doping of silicon by radiation-induced diffusion

1. <i>Point Defects in Metals</i>

   Arthur Damask, G. J. Dienes, R. Smoluchowski

   Мақола19643 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390562

2. A new mechanism for interstistitial migration

   J. C. Bourgoin, J. W. Corbett

   Мақола19723 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.624020

3. Interstitial mechanism of the low-temperature gold migration in silicon

   M. A. Kaneev, A. I. Koifman, O. R. Niyazova

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19732 иқтибос

   ABIABI:AkademIndex/openalex/1973.article.000018

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.655286

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.655287

6. Influence of structure defects on the radiation enhanced gold diffusion in silicon

   A. I. Koifman, N. Narkulov, Marat S. Yunusov

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19751 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.655288

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.655289