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Иш: The photoelectric characteristics of solar p–i–n photocells based on hydrogenated amorphous silicon with built-in electric field homogeneous in the i-layer thickness

1. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

   D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19884 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.244481

2. Mobility-lifetime product and interface property in amorphous silicon solar cells

   H. Okamoto, H. Kida, Shuichi Nonomura +2

   Мақола19832 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568654

3. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659358

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659359