TeCd antistructural defects in CdTe crystals

Two-temperature annealing with a controlled vapor pressure of tellurium P Te2 is used to study CdTe〈Cl〉 crystals under conditions of high-temperature thermodynamic equilibrium of the crystal with the gas phase (735–940 °C). For low pressures P Te2 (≥P min) ClTe+ begins to condense because of the formation of VCd −2 in the crystal. As P Te2 increases, this mechanism of exact self-compensation no longer operates because of the formation of TeCd+ intrinsic antistructural point defects.

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