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Иш: Carrier transport in a diode base with locally nonuniform recombination properties

1. On the generation of radiation defects by accelerated ions in silicon

   А. В. Иванов, N. B. Strokan

   МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000274