Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures
V. Vorlı́čekInstitute of Physics, Academy of Sciences of the Czech Republic, PrahaK. D. MoiseevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. P. MikhaĭlovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. HuliciusInstitute of Physics, Academy of Sciences of the Czech Republic, PrahaT. ŠimečekInstitute of Physics, Academy of Sciences of the Czech Republic, Praha
ABI
Аннотация
Ga1-x InxAsySb1-y quaternary solid solutions lattice- matched to the InAs (001) substrate with composition in the range 0.06 ≤ x ≤ 0.22 were grown by liquid phase epitaxy. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaAs-like and (GaSb+InAs)-like mixture modes is discussed. The modified REI model developed by JAW et al. seems to describe the observed behaviour reasonably. Possibility of determination of the alloy composition from Raman spectra is considered.
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