M. P. Mikhaĭlova

6 та иш

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

1. Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure

   K. D. Moiseev, M. P. Mikhaĭlova, O. V. Andreichuk +2

   МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000128

2. New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers

   В. А. Соловьев, M. P. Mikhaĭlova, M. V. Stepanov +2

   МақолаSpectroscopy and Laser ApplicationsTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000204

3. Properties of the electron channel in single GaInAsSb/p-InAs heterostructures

   T. I. Voronina, T. S. Lagunov, M. P. Mikhaĭlova +4

   МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000257

4. Growth of InAs photodiode structures from metalorganic compounds

   S. S. Kizhaev, M. P. Mikhaĭlova, C. C. Molchanov +2

   МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000119

5. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

   V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

   МақолаSemiconductor Quantum Structures and DevicesCrystal Research and Technology20020 иқтибос

   ABIABI:AkademIndex/openalex/2002.article.000109

6. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

   V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

   МақолаAdvanced Semiconductor Detectors and MaterialsCrystal Research and Technology20020 иқтибос

   ABIABI:AkademIndex/openalex/2002.article.000182