Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure

Intense electroluminescence is observed for the first time in a AlGaAsSb/In0.9Ga0.1As0.89Sb0.21/AlGaAsSb double heterostructure in the 3–4 μm wavelength range at T=77 K. The structure was grown on a GaSb substrate by liquid-phase epitaxy. The photon energy at the maximum of the narrow emission band with a half-width of 9–10 eV is hv=387 meV which is 60 meV greater than the band gap of the narrow-gap InGaAsSb solid solution (E g =326 meV). This behavior is attributed to the population inversion characteristics of the active region when an external bias is applied

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