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Иш: Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

1. Electric voltage redistribution effect in Schottky barrier structures based on Si<P,Ni> under hydrostatic pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   МақолаSemiconductor materials and interfacesJournal of Physics Conference Series20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.009197