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Иш: 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

  1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

    N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 иқтибос
    ABI

  2. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

    N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 иқтибос
    ABI

  3. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

    Peder Bergman, H. Lendenmann, Per Åke Nilsson +2

    Мақола20012 иқтибос
    ABI

  4. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

    H. Lendenmann, Fanny Dahlquist, Nils Johansson +4

    Мақола20012 иқтибос
    ABI

  5. Сарлавҳасиз

    Бошқа2 иқтибос
    ABI

  6. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

    H. Morkoç̌, S. Strite, Guangjun Gao +3

    Мақола19942 иқтибос
    ABI