Ушбу иш иқтибос қилган ишлар

4 та иш

Иш: About the Nature of Recombination Current in 4H-SiC pn Structures

1. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

   Chih‐Tang Sah, Robert N. Noyce, W. Shockley

   Мақола195714 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.382034

2. Ideal 4H-SiC pn junction and its characteristic shunt

   Anatoly M. Strel’chuk, N.S. Savkina

   Мақола20013 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.382033

3. Performance limiting surface defects in SiC epitaxial p-n junction diodes

   Tsunenobu Kimoto, N. Miyamoto, H. Matsunami

   Мақола19992 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.529505

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.615798