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Ушбу иш иқтибос қилган ишлар

7 та иш

Иш: Radiation Hard Devices Based on SiC

  1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    T. Dalibor, Gerhard Pensl, H. Matsunami +4

    Мақола19975 иқтибос
    ABI

  2. Epitaxial silicon carbide charge particle detectors

    F. Nava, P. Vanni, C. Lanzieri +1

    Мақола19993 иқтибос
    ABI

  3. Development of a silicon carbide radiation detector

    F.H. Ruddy, A.R. Dulloo, J.G. Seidel +2

    Мақола19983 иқтибос
    ABI

  4. Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide

    A.L. Barry, B. Lehmann, Daniel Fritsch +1

    Мақола19912 иқтибос
    ABI

  5. Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

    E. V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    Мақола20042 иқтибос
    ABI

  6. High Energy Resolution Detectors Based on 4H-SiC

    Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

    МақолаParticle Detector Development and PerformanceMaterials science forum20051 иқтибос
    ABI

  7. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI