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Иш: Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

1. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

   A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

   МақолаSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20080 иқтибос

   ABIABI:AkademIndex/openalex/2008.article.000339