Ушбу иш иқтибос қилган ишлар

9 та иш

Иш: Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

1. Сарлавҳасиз

   Бошқа1117 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.000713

2. Сарлавҳасиз

   Бошқа8 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.545705

3. Physics of semiconductor devices

   Мақола19906 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.614904

4. Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

   A. V. Karimov, D. A. Karimova

   МақолаSemiconductor materials and interfacesMaterials Science in Semiconductor Processing20035 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000100

5. InGaAsP heterostructure avalanche photodiodes with high avalanche gain

   Katsuhiko Nishida, K. Taguchi, Yoshishige Matsumoto

   Мақола19795 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.534518

6. Heterostructure Lasers

   H. C. Casey, M. B. Panish, T. A. Roth

   Мақола19793 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.655042

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.655039

8. AFM and XRD studies of GaAs surface after anisotropic etching

   N. L. Dmitruk, V.P. Kladko, Р. В. Конакова +1

   МақолаOptical Coatings and GratingsThe European Physical Journal Applied Physics20041 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.655040

9. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.655041