Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Dependence of the divacancy concentration on the germanium content in p-Si1 − x Ge x (0 < x < 0.10) alloys irradiated with 5-MeV electrons

1. Impurities and point defects in semiconductors

   V. V. Emtsev, T.V. Mashovets

   Мақола19817 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.360584

2. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy

   G. D. Watkins, J. W. Corbett

   Мақола19656 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.360543

3. Production of Divacancies and Vacancies by Electron Irradiation of Silicon

   J. W. Corbett, G. D. Watkins

   Мақола19653 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.572508

4. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

   М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

   МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20071 иқтибос

   ABIABI:AkademIndex/openalex/2007.article.000203

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.667467

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.667468

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.667469

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.667470