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The quantum solution of the accumulation layer problem of n-InN

A. A. KlochikhinIoffe Physico-Technical Institute, St. Petersburg, 194021, RussiaI. Yu. StrashkovaIoffe Physico-Technical Institute, St. Petersburg, 194021, Russia
Semiconductorsjournal2009en
ABI

Аннотация

The quantum theory of the accumulation layer for n-type InN crystals is developed. The Coulomb interaction and the exchange interaction in the Kohn-Sham local density approximation is considered. The applicability of the theory is demonstrated by using recent literature data. The approach developed provides more solid data on the accumulation layer parameters.

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