Raman scattering of light in semiconductor wires
B. É. ÉshpulatovSamarkand Branch of the Tashkent University of Information Technologies, ul. Shokhrukh mirzo 47A, Samarkand, 140104, Republic of UzbekistanЭ. У. АрзикуловNavoi Samarkand State University, Universitetskii bul’var 15, Samarkand, 140104, Republic of UzbekistanD. Sh. KhuzhanovaNavoi Samarkand State University, Universitetskii bul’var 15, Samarkand, 140104, Republic of Uzbekistan
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Аннотация
The differential cross section of Raman scattering in semiconductor size-quantized wires is calculated. The interband transitions between the size-quantized subbands are considered. It is shown that, in the intermediate states, electron-hole pairs exist related to the subbands of the conduction and valence bands. The dependence of the scattering cross section versus the frequency of the exciting and scattered light is analyzed for an arbitrary polarization of the secondary radiation. The singularity of the differential cross section of the scattering is shown.
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