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The nature of thermovoltaic currents and voltages observed for the polycrystalline silicon synthesized by means of five-time melting of engineering silicon in a solar furnace

А. С. СаидовApplied Physics Institute, NPO Physics of the Sun, Uzbek Academy of Sciences, ul. Mavlyanova 25, Tashkent, 700084, UzbekistanA. Yu. LeĭdermanApplied Physics Institute, NPO Physics of the Sun, Uzbek Academy of Sciences, ul. Mavlyanova 25, Tashkent, 700084, UzbekistanSh. T. ManshurovApplied Physics Institute, NPO Physics of the Sun, Uzbek Academy of Sciences, ul. Mavlyanova 25, Tashkent, 700084, Uzbekistan
Applied Solar Energyjournal2011en
ABI

Аннотация

The current-voltage performances of samples with two ohmic contacts made of polycrystalline silicon synthesized by means of five-time melting in a solar furnace have been investigated under temperature variation from 30 to 200°C. It is shown that, for temperatures from 150 to 200°C, such a sample is characterized by rectifying properties. This phenomenon is explained by using the principles of self-organization process developing in this system.

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