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Иш: The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon

1. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

   M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +4

   МақолаAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20091 иқтибос

   ABIABI:AkademIndex/openalex/2009.article.000313