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5 та иш

Иш: Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

1. Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon

   М. К. Бахадырханов, Z.M. Saparniyazova, Х. М. Илиев +1

   МақолаSemiconductor Quantum Structures and DevicesInorganic Materials20151 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.419054

2. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

   M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3

   МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20211 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.419058

3. Photoconductivity and bandgap of binary impurity - doped crystalline silicon

   A. Sh. Mavlyanov, M. K. Khakkulov, O. E. Sattarov +2

   МақолаSilicon and Solar Cell TechnologiesJournal of Physics Conference Series20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.003298

4. Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon

   M. K. Khakkulov, A. Sh. Mavlyanov, О. Э. Саттаров +2

   МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010338

5. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   МақолаThermal properties of materialsAIP conference proceedings20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009659