Alloying of materials and energy barriers of photoelectric thermal cells
М. С. СаидовPhysical Technical Institute, Physics of the Sun Scientific Association, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The possibility for designing highly effective photoelectric thermal cells on the basis of heavily alloyed narrow-zone semiconductors with forbidden bandwidths of 0.3–0.4 eV is discussed.
Ҳали таржима қилинмаган
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Идентификаторлар
Иқтибослар ва манбалар
0 та иқтибос1 та фойдаланилган манба