Ушбу иш иқтибос қилган ишлар

2 та иш

Иш: ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE

1. On the tensosensitivity of a p-n junction under illumination

   G. Gulyamov, A. G. Gulyamov

   МақолаOptical Polarization and EllipsometrySemiconductors201510 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.410276

2. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.675143