Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API
← Ишга қайтиш

Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: On the Method of Calculation of the Photocurrent in Structures with Periodically Positioned Nanoinclusions

  1. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20174 иқтибос
    ABI

  2. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

    K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина +4

    Мақола20094 иқтибос
    ABI

  3. AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs

    S. A. Blokhin, A. V. Sakharov, A. M. Nadtochy +9

    Мақола20093 иқтибос
    ABI

  4. High-density InSb-based quantum dots emitting in the mid-infrared

    Vittorianna Tasco, N. Deguffroy, А. Н. Баранов +5

    Мақола20063 иқтибос
    ABI

  5. MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

    P. Möck, G. R. Booker, N. J. Mason +4

    Мақола20013 иқтибос
    ABI

  6. Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

    Ya. A. Parkhomenko, P. A. Dementev, K. D. Moiseev

    Мақола20163 иқтибос
    ABI

  7. 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells

    Hiromasa Fujii, Kasidit Toprasertpong, Yunpeng Wang +3

    Мақола20132 иқтибос
    ABI

  8. GaAs quantum well‐dots solar cells with spectral response extended to 1100 nm

    S. А. Mintairov, N. А. Kalyuzhnyy, M. V. Maximov +3

    Мақола20152 иқтибос
    ABI