Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

1. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

   N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

   МақолаSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics20232 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.002462

2. Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y

   Akramjon Y. Boboev

   МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20241 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.467189