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Иш: The Effect of the Formation of Silicides on the Resistivity of Silicon
Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films
D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков
МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201314 иқтибосABIInfluence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures
Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev
МақолаSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20148 иқтибосABIInteraction of cobalt atoms with an oxidized Si(100)2 × 1 surface
M. V. Gomoyunova, I. I. Pronin, D. E. Malygin +3
Мақола20052 иқтибосABI