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Иш: High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

1. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

   I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

   МақолаSemiconductor materials and interfacesE3S Web of Conferences20211 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.571863