Ушбу иш иқтибос қилган ишлар

4 та иш

Иш: Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

   А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

   МақолаChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.369422

2. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

   А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

   МақолаAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 иқтибос

   ABIABI:AkademIndex/openalex/2013.article.000105

3. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   МақолаPhase-change materials and chalcogenidesApplied Solar Energy20198 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278129

4. Direct-bandgap emission from hexagonal Ge and SiGe alloys

   Elham Fadaly, Alain Dijkstra, Jens Renè Suckert +17

   Мақола20206 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278128