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Иш: Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

1. Statical Currents of p-Si–n-Si1-δSnδ–n+-Si1-δSnδ (0≤δ≤0.04)-Structures with Tin Quantum Dots

   Khurshidjon M. Madaminov, Avazbek Sh. Ikromov, Azizbek A. Abdurakhmonov

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009021