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6 та иш

Иш: Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Мақола201111 иқтибос
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Мақола20126 иқтибос
    ABI

  3. Impact of self-heating effect on the performance of hybrid FinFET

    Rajeev Pankaj Nelapati, K. Sivasankaran

    Мақола20185 иқтибос
    ABI

  4. Physical origin of negative differential resistance in SOI transistors

    Liam McDaid, Steven Hall, Phil Mellor +2

    Мақола19895 иқтибос
    ABI

  5. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    МақолаAdvancements in Semiconductor Devices and Circuit Design20144 иқтибос
    ABI

  6. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Мақола20184 иқтибос
    ABI