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2 та иш

Иш: Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

  1. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

    A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

    МақолаSilicon Nanostructures and PhotoluminescenceVacuum20250 иқтибос
    ABI

  2. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

    A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

    БобSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation20250 иқтибос
    ABI