Мақола

Performance Analysis Of SRAM and Dram in Low Power Application

S. YuvarajDepartment of Electronics And Communication Engineering, Prince shri Venkateshwara Padmavathy Engineering College, Chennai, IndiaD. PadmanabanDepartment of Electronics And Communication Engineering, Prince shri Venkateshwara Padmavathy Engineering College, Chennai, IndiaG. PraveenKumarDepartment of Electronics And Communication Engineering, Prince shri Venkateshwara Padmavathy Engineering College, Chennai, IndiaSatendra SahuDepartment of Mechanical Engineering, IES College Of Technology, Bhopal, MP 462044 IndiaMasharipova UmidaTashkent State Pedagogical University, Tashkent, UzbekistanR. Yokeshwaran

E3S Web of Conferencesjournal2023en

ABI

Аннотация

All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of the memory chips, to increase the speed, to reduce leakage current, and to increase the power efficiency. Due to its high storage density and quick access time, it has also become a popular data storage device. SRAM has been given priority in the research community due to the recent sharp development in low power and low voltage memory devices. In this study, the design and performance of SRAM and DRAM cells were analyzed. This paper outlines the development and application of modified 6T SRAM cell with increased power efficiency.

Мавзулар

Low-power high-performance VLSI design VLSI and Analog Circuit Testing VLSI and FPGA Design Techniques

Идентификаторлар

DOI: 10.1051/e3sconf/202339901014

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