Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

1. Silicon with Binary GexSi1 – x Compounds

   Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

   МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002219

2. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

   Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

   МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.005819