Ушбу иш иқтибос қилган ишлар

13 та иш

Иш: Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

Transport properties of silicon doped with manganese via low-temperature diffusion
М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4
МақолаSilicon and Solar Cell TechnologiesInorganic Materials201124 иқтибос
ABI
Infrared quenching of photoconduction in silicon with multicharge manganese clusters
M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1
МақолаSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20136 иқтибос
ABI
Spectra of the energy levels of multicharged nanoclusters of manganese atoms in silicon
М. К. Бахадырханов, С. Б. Исамов
МақолаLaser-Ablation Synthesis of NanoparticlesSurface Engineering and Applied Electrochemistry20113 иқтибос
ABI
The electrical properties of zinc in silicon
Sharon M. Weiss, R. Beckmann, Rainer Kassing
Мақола19903 иқтибос
ABI
Carrier transport mechanisms in semiconductor nanostructures and devices
M. A. Rafiq
Мақола20183 иқтибос
ABI
Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K
Sana Boughdachi, Yosef Badalı, Yashar Azizian‐Kalandaragh +1
Мақола20182 иқтибос
ABI
Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials
David Degler, Udo Weimar, Nicolae Bârsan
Шарҳ мақола20192 иқтибос
ABI
Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
A. Türüt
Мақола20202 иқтибос
ABI
Tunneling via surface dislocation in W/β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes
Madani Labed, Ji Young Min, Amina Ben Slim +4
Мақола20232 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI