Ушбу иш иқтибос қилган ишлар

4 та иш

Иш: Development of technology for creating high-voltage p0–n0 junctions based on GaAs

1. Space-charge-induced negative resistance in avalanche diodes

   H.C. Bowers

   Мақола19682 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.516461

2. The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

   О. О. Маматкаримов, Р. Х. Хамидов, A. A. Abdukarimov

   МақолаElectromagnetic Effects on MaterialsMaterials Today Proceedings20191 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000617

3. Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons

   M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +6

   МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20101 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.584392

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.584393