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Ушбу иш иқтибос қилган ишлар

17 та иш

Иш: Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

  1. Electronic States in Semiconductor Heterostructures

    G. Bastard, J. A. Brum, R. Ferreira

    Боб19915 иқтибос
    ABI

  2. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    И. С. Васильевский, Г. Б. Галиев, E. A. Klimov +7

    Мақола20112 иқтибос
    ABI

  3. InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

    Fei Xue, Han Zhao, Yen‐Ting Chen +3

    Мақола20112 иқтибос
    ABI

  4. Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates

    А. Л. Васильев, И. С. Васильевский, Г. Б. Галиев +6

    Мақола20112 иқтибос
    ABI

  5. Submicron Gate-Fitted Superconducting Junction Using a Two-Dimensional Electron Gas

    Hideaki Takayanagi, Tatsushi Akazaki

    Мақола19952 иқтибос
    ABI

  6. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well

    Г. Б. Галиев, И. С. Васильевский, E. A. Klimov +4

    Мақола20152 иқтибос
    ABI

  7. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

    Д. С. Пономарев, И. С. Васильевский, Г. Б. Галиев +4

    Мақола20122 иқтибос
    ABI

  8. Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

    J. Ajayan, D. Nirmal, P. Prajoon +1

    Мақола20172 иқтибос
    ABI

  9. Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells

    M. Yu. Chernov, Victor A. Solov’ev, O. S. Komkov +6

    Мақола20172 иқтибос
    ABI

  10. Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

    S. V. Ivanov, M. Yu. Chernov, В. А. Соловьев +3

    Мақола20182 иқтибос
    ABI

  11. Performance Analysis of InP based Composite Channel e-mode HEMT Device for High Frequency Applications

    Murali Krishna, M M Rahool, K. Dinesh Kumar +2

    Мақола20212 иқтибос
    ABI

  12. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  13. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  14. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  15. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  17. Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

    Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

    МақолаSemiconductor Quantum Structures and DevicesThe European Physical Journal B20231 иқтибос
    ABI