← Ишга қайтиш
Ушбу иш иқтибос қилган ишлар
20 та иш
Иш: Composition of silicon jointly doped with impurity atoms of gallium and phosphorus
Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)
А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5
ABIGallium Phosphide Window Layer for Silicon Solar Cells
Markus Feifel, Thomas Rachow, Jan Benick +5
Мақола20152 иқтибосABIRaman Spectroscopy and Structure of Crystalline Gallium Phosphide Nanowires
Qihua Xiong, Rajeev Gupta, Kofi W. Adu +5
Мақола20032 иқтибосABIGallium Phosphide-on-Silicon Dioxide Photonic Devices
K. Schneider, Pol Welter, Yannick Baumgartner +3
Мақола20182 иқтибосABIИССЛЕДОВАНИЕ ПОВЕРХНОСТИ КРЕМНИЯ ИМПЛАНТИРОВАННОГО ИОНАМИ МЕДИ
Ш. Т. Хожиев, А А Ганиев, В. М. Ротштейн +3
Мақола20202 иқтибосABI